PART |
Description |
Maker |
BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管,耗尽 N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode From old datasheet system
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. Vishay Telefunken VISAY[Vishay Siliconix]
|
BF992 BF992-2015 BF992-15 |
Silicon N-channel dual gate MOS-FET N-channel dual-gate MOSFET
|
Quanzhou Jinmei Electro... NXP Semiconductors Quanzhou Jinmei Electronic ...
|
BF998WR |
N-channel dual-gate MOS-FET
|
Philips
|
BF998WR |
N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
BF1109WR BF1109 BF1109R |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BF989 |
N-channel dual-gate MOS-FET
|
NXP Semiconductors Vishay Siliconix Philips Semiconductors
|
3SK297 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
BF966 |
N-Channel Dual Gate MOS Fieldeffect Tetrod
|
Telefunken
|
3SK298 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
3SK194 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
3SK186 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|